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The performance of 4-inch VB method gallium oxide substrate of Fujia Gallium Industry has reached the international advanced level.
On February 20, the reporter learned from the Hangzhou Institute of Optics and Fine Mechanics that Hangzhou Fujia Gallium Industry, an incubator of the Hangzhou Institute of Optics and Mechanics, has made a major breakthrough in the field of vertical Bridgeman (VB) gallium oxide crystal growth, and the quality of the tested single crystal has reached the international advanced level. The test results show that there are no twins in the 4-inch VB crystal grown by Fujia gallium equipment, and the XRD half-height full-width (FWHM) of the single crystal substrate is better than 50arcsec, which is comparable to the quality of the gallium oxide single crystal substrate prepared by the guide mode method, and the performance has reached the international advanced level.
XRD2.38%
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